N-Channel Enhancement Mode MOSFET
SSC8120GS6
N-Channel Enhancement Mode MOSFET
Features
VDS 20V
VGS ±12V
RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8
I...
Description
SSC8120GS6
N-Channel Enhancement Mode MOSFET
Features
VDS 20V
VGS ±12V
RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8
ID 1.2A
ESD 1.2K
General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications
Load Switch
Portable Devices DCDC Conversion
Pin configuration
Top View
Package Information
③ ①②
SOT23 Unit:mm
SSC-V1.0
http://www.afsemi.com
1/4
Analog Future
SSC8120GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Power Dissipation(1)
Continuous Pulsed
Operating and Storage Junction Temperature Range
Symbol VDSS VGSS
ID
PD TJ, TSTG
Ratings 20 ±12 1.2 3 250
-55 to +150
Electrical Characteristics @ TA = 25°C unle...
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