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SSC8030GT4 Dataheets PDF



Part Number SSC8030GT4
Manufacturers AFSEMI
Logo AFSEMI
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8030GT4 DatasheetSSC8030GT4 Datasheet (PDF)

SSC8030GT4 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8.5mR@10V 10.5mR@4V5 ID 75A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Top View S D G  Package Information Unit: mm TO220 SSC-V1.0 http://www.afsemi.com 1/4 Analog Future SSC8030.

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SSC8030GT4 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8.5mR@10V 10.5mR@4V5 ID 75A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Top View S D G  Package Information Unit: mm TO220 SSC-V1.0 http://www.afsemi.com 1/4 Analog Future SSC8030GT4  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range VDSS VGSS ID IDM PD TJ, TSTG N-channel 30 ±20 75 200 70 -55 to +150 Unit V V A A W °C  Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Drain–Source Breakdown Vol.


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