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SSC8124GT8 Dataheets PDF



Part Number SSC8124GT8
Manufacturers AFSEMI
Logo AFSEMI
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8124GT8 DatasheetSSC8124GT8 Datasheet (PDF)

SSC8124GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 22mR@4V5 ID  Applications  Load Switch  Portable Devices  DCDC Conversion 20V ±8V 25mR@2V5 32mR@1V8 9A  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery pow.

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SSC8124GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 22mR@4V5 ID  Applications  Load Switch  Portable Devices  DCDC Conversion 20V ±8V 25mR@2V5 32mR@1V8 9A  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.  Package Information SSC-V1.0 Units:mm http://www.afsemi.com 1/4 Analog Future SSC8124GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range Symbo.


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