N-Channel Enhancement Mode MOSFET
SSC8036GS1
N-Channel Enhancement Mode MOSFET
Features
Applications
VDS 30V
VGS ±20V
RDSon TYP 20mR@10V 30mR@4V...
Description
SSC8036GS1
N-Channel Enhancement Mode MOSFET
Features
Applications
VDS 30V
VGS ±20V
RDSon TYP 20mR@10V 30mR@4V5
ID 8.5A
Load Switch
Portable Devices DCDC conversion
General Description
Pin configuration
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC8036GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current Total Power Dissipation (note1)
Continuous Pulse TA = 25°C TA = 75°C
ID IDM
PD
Operating and Storage Junction Temperature Range Note1: Surface Mounted on 1in2 pad area.
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ratings 30 ±20 8.5 50 3 2.1
-55 to +150
...
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