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SSC8162GT3

AFSEMI
Part Number SSC8162GT3
Manufacturer AFSEMI
Description N-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8162GT3 N-Channel Enhancement Mode MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 9mR@10V 13mR@4V5 ID 60A  ...
Datasheet PDF File SSC8162GT3 PDF File

SSC8162GT3
SSC8162GT3

Overview
SSC8162GT3 N-Channel Enhancement Mode MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 9mR@10V 13mR@4V5 ID 60A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Applications  Load Switch  Portable Devices  DCDC conversion Pin Configuration Top View  Package Information SSC-V1.
0 http://www.
afsemi.
com 1/5 Analog Future SSC8162GT3 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (Note 1) ID Plused Drain Current (Note 2) ID...


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