SSC8228GQ4

SSC8228GQ4 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±12V RDSon TYP 5.5mR@4V5 7mR@2V5 ID 40A   General Description The SSC8228GQ4 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Applications  Load Switch  Portable Devices  DCDC Conversion Pin configuration Top View  Package Information SSC-1V0 Package: DFN3X3 Symbol A A1 A3 D E D1 E1 k b e L Dimenions Millimeters Min. Max. 0.700/0.800 0.800/0.900 0.000 0.050 0.203REF 2.924 3.076 2.924 3.076 2.350 2.550 1.700 1.900 0.450 0.550 0.270 0.370 0.650TYP 0.324 0.476 1/5 http://www.afsemi.com SSC8228GQ4  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipationnote2 Continuousnote1 Pulsed Junction and Storage Temperature Range Symbol VDSS VGSS ...