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SSC8120GS8

AFSEMI
Part Number SSC8120GS8
Manufacturer AFSEMI
Description N-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8120GS8 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5...
Datasheet PDF File SSC8120GS8 PDF File

SSC8120GS8
SSC8120GS8

Overview
SSC8120GS8 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5 0.
8A 1.
2K 850mR@1V8   General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .
This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
 Package Information Applications  Replace Digital Transistor  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Pin Configuration Top View DD 33 12 GS 1 S Package:SOT523 Unit:mm Dim Min Typ Max A 0.
1...


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