SSC8LA0GS1

SSC8LA0GS1 N-Channel Enhancement Mode MOSFET  Features  VDS 100V VGS ±20V RDSon TYP 9.5mR@10V 13.5mR@4V5 ID 14A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Industrial and Motor Drive applications  DC/DC conversion and AC/DC Converters Pin Configuration Top View  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8LA0GS1 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (Note 1) ID Plused Drain Current (Note 2) IDM Total Power Dissipation (Note 1) PD Operating and Storage Junction Temperature Range TJ, TSTG N-channel 100 ±20 14 100 2.0 -55 to +150 Unit V V A A W °C  Electrical Characteri...