DatasheetsPDF.com

SSC8LA0GT8 Dataheets PDF



Part Number SSC8LA0GT8
Manufacturers AFSEMI
Logo AFSEMI
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8LA0GT8 DatasheetSSC8LA0GT8 Datasheet (PDF)

SSC8LA0GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Computer  Notebook 100V ±20V 9mR@10V 13mR@4V5 60A  Pin Configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8LA0GT8  Absolute Maxim.

  SSC8LA0GT8   SSC8LA0GT8



Document
SSC8LA0GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Computer  Notebook 100V ±20V 9mR@10V 13mR@4V5 60A  Pin Configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8LA0GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Operating and Storage Junction Temperature Range Pulsed Drain Current (Note 2) Mounted on PCB of Minimum Footprint Continuous Drain Current (Note 1) Avalanche energy L=0.1mH C Mounted on PCB of 1in2 Pad Area Total Power Dissipation (Note 1) Pulsed Drain Current (Note 2) Continuous Drain Current (25°C) Total Power Dissipation (25°C)  Electrical Characteristics @ TA = 25°C u.


SSC8030GQ4 SSC8LA0GT8 SSC8LA0GS1


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)