Document
SSC8LA0GT8
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
ID
Applications Desktop Computer Notebook
100V ±20V
9mR@10V 13mR@4V5
60A
Pin Configuration
General Description
Top View
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Package Information
Units:mm
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future
SSC8LA0GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter
Drain-Source Voltage Gate-Source Voltage Operating and Storage Junction Temperature Range
Pulsed Drain Current (Note 2)
Mounted on PCB of Minimum Footprint Continuous Drain Current (Note 1)
Avalanche energy L=0.1mH C
Mounted on PCB of 1in2 Pad Area
Total Power Dissipation (Note 1)
Pulsed Drain Current (Note 2) Continuous Drain Current (25°C) Total Power Dissipation (25°C)
Electrical Characteristics @ TA = 25°C u.