SSC8030GQ4

SSC8030GQ4 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8 mR@10V 10mR@4V5 ID 19A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Bottom View  Package Information SSC-1V0 Package: DFN3X3 http://www.afsemi.com 1/4 Analog Future SSC8030GQ4  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Repetitive avalanche energy L=0.1mH C Storage Junction Temperature Range VDSS VGSS ID IDM PD EAS TJ, TSTG N-channel 30 ±20 19 90 2 30 -55 to +150 Unit V V A A W mJ °C  Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Drai...