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SSC8013GSB

AFSEMI
Part Number SSC8013GSB
Manufacturer AFSEMI
Description P-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8013GSB P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Applications  Load Switc...
Datasheet PDF File SSC8013GSB PDF File

SSC8013GSB
SSC8013GSB

Overview
SSC8013GSB P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Applications  Load Switch  Portable Devices  DCDC conversion -12V ±8V 47mR@-2V5 -5A 61mR@-1V8  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.
This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.
Excellent thermal and D: Drain; G: Gate; S: Source electrical capabilities.
 Package ...


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