SSC8023GS6

SSC8023GS6 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 ID -3A  Applications  Load Switch  Portable Devices  DCDC conversion  Pin configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.  Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8023GS6  Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Continuous) ID Drain Current (Pulse...