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SSC8027GS6

AFSEMI

P-Channel Enhancement Mode MOSFET


Description
SSC8027GS6 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±8V RDSon TYP 100mR@-4V5 119mR@-2V5 ID -2A  Applications  Load Switch  Portable Devices  DCDC conversion  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state re...



AFSEMI

SSC8027GS6

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