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SSC8035GS6 Dataheets PDF



Part Number SSC8035GS6
Manufacturers AFSEMI
Logo AFSEMI
Description P-Channel Enhancement Mode MOSFET
Datasheet SSC8035GS6 DatasheetSSC8035GS6 Datasheet (PDF)

SSC8035GS6 P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 51mR@-10V ID  Applications  Load Switch  Portable Devices  DCDC conversion -30V ±12V 60mR@-4V5 98mR@-2V5 -4A  Pin configuration  General Description Top View This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent .

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SSC8035GS6 P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 51mR@-10V ID  Applications  Load Switch  Portable Devices  DCDC conversion -30V ±12V 60mR@-4V5 98mR@-2V5 -4A  Pin configuration  General Description Top View This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities.  Package Information ③ ①② SOT23 Units:mm SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8035GS6  Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Maximum Drain Current – Continuous ID – Pulsed IDM Continuous Power Dissipation PD Operating and Storage Temperature Range TJ,TSTG Ratings -30 ±12 -4 -17 250 -55 to 150 Unit V V .


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