SSC8035GSB

SSC8035GSB P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 51mR@-10V ID  Applications  Load Switch  Portable Devices  DCDC conversion -30V ±12V 60mR@-4V5 98mR@-2V5 -4.2A  Pin configuration  General Description Top View This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities.  Package Information ⑥ ⑤④ ①② ③ Units:mm SOT23-6L SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8035GSB  Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Maximum Drain Current – Continuous ID – Pulsed IDM Continuous Power Dissipation PD Operating and Storage Temperature Range TJ,TSTG Ratings -30 ±12 -4.2 -30 1000 -...