SSC8039GT3

SSC8039GT3 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -11A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8039GT3  Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID PD TJ, TSTG Ratings 30 ±20 11 28 2.5 -55 to +150 Unit V V A W °C  Electrical Characteristics @TA = 25℃ un...