SSC8039GT4

SSC8039GT4 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -50A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information S D G SSC-1V0 Unit: mm TO220 http://www.afsemi.com 1/5 Analog Future SSC8039GT4  Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Operating and Storage Temperature Range Pulsed Drain Current (Note 2) Mounted on PCB of Minimum Footprint Continuous Drain Current (Note 1) Total Power Dissipation (Note 1) Pulsed Drain Current (Note 2) Mounted on P...