SSC8039GQ4

SSC8039GQ4 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Bottom View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information SSC-1V0 Package: DFN3X3 http://www.afsemi.com 1/5 Analog Future SSC8039GQ4  Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID PD TJ, TSTG Limit -30 ±20 -10 -50 3 -55 to +150 Unit V ...