P-Channel Enhancement Mode MOSFET
SSC8125GS6
P-Channel Enhancement Mode MOSFET with ESD Protection
Features
VDS VGS -20V ±8V
RDSon TYP 36mR@-4V5 45m...
Description
SSC8125GS6
P-Channel Enhancement Mode MOSFET with ESD Protection
Features
VDS VGS -20V ±8V
RDSon TYP 36mR@-4V5 45mR@-2V5 57mR@-1V8 66mR@-1V5
ID ESD -4A 3kV
Applications
Load Switch
Portable Devices DCDC Conversion
Pin configuration
Top View
D
General Description
This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.
Package Information
GS
③
①②
SOT23 Unit:mm
SSC-1V0
http://www.afsemi.com
1/4
Analog Future
SSC8125GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current(1) Power Dissipation(1)
Continuous Pulsed
Junction and Storage Temperature Range
Symbol VDSS VGSS
ID
PD TJ, TSTG
Ratings -20 ±8 -4 -20 450
-55 to +150
Electrical Characteristics @ TA = ...
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