SSC8129GS1
P-Channel Enhancement Mode MOSFET
Features
VDS -20V
VGS ±12V
RDSon TYP 10mR@-4V5V 13mR@-2V5
ID -18A
Applications
Load Switch
DCDC conversion NB battery
Pin configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resist...
