SSC8121GN1

SSC8121GN1 P-Channel Enhancement Mode MOSFET ⚫ Features VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±8V 190mR@-2V5 -1.0A 255mR@-1V8 ⚫ General Description This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities. ⚫ Package Information ⚫ Applications ➢ Load Switch ➢ Portable Devices ➢ DCDC conversion ⚫ Pin Configuration Top View Bottom View G D S ⚫ Ordering Information Device SSC8121GN1 DFN1006 Package DFN1006 Marking K SSC-1V0 http://www.afsemi.com Qty Per Reel 10000 1/5 Analog Future SSC8121GN1 ⚫ Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage...