ME4412

N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4412/ME4412-G FEATURES RDS(ON) 18 mΩ@VGS=10V RDS(ON) 30 mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load SwitchC LCD Display inverter e Ordering Information: ME4412 (Pb-free) ME4412-G (Green product-Halogen free) Absolut...