P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP3405, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Description
Alfa-MOS
Technology
General Description
AFP3405, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L )
AFP3405
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-4.0A,RDS(ON)=38mΩ@VGS=-10V -30V/-2.8A,RDS(ON)=48mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) SOT-23-3L package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3405S23RG
35YW
SOT-23-3L
ϡʳ 35 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP3405S23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp....
Similar Datasheet