N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN3404S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN3404S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L )
AFN3404S
30V N-Channel Enhancement Mode MOSFET
Features
30V/5.5A,RDS(ON)=20mΩ@VGS=10V 30V/5.0A,RDS(ON)=24mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-23-3L package design
Application
DC/DC Converters, High Speed Switching
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3404SS23RG
A4YW
SOT-23-3L
ϡʳ A4 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN3404SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Aug. 2014
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