N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN7402, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Description
Alfa-MOS
Technology
General Description
AFN7402, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-323 )
AFN7402
20V N-Channel Enhancement Mode MOSFET
Features
20V/3.6A,RDS(ON)=60mΩ@VGS=4.5V 20V/3.2A,RDS(ON)=70mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design
Application
Portable Equipment Battery Powered System Net Working System
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN7402S32RG
02YW
SOT-323
ϡʳ 02 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ...
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