P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP7401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP7401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-323 )
AFP7401S
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-2.8A,RDS(ON)=115mΩ@VGS=-10.0V -30V/-2.5A,RDS(ON)=150mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=185mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design
Application
Power Management in Note book Portable Equipment Battery Powered System Net Working System
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP7401SS32RG
1SYW
SOT-323
ϡʳ 1S parts code
...
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