N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
AFN5510S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN5510S, N-Channel enhancemen...
Description
Alfa-MOS
Technology
AFN5510S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN5510S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
100V/30A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-252-2L )
Application
Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN5510ST252RG
5510S
TO-252-2L
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN5510ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2014
Description Gate Source Drain
Unit Tape & Reel
Quantity 2500 EA
www.alfa-mos.com
Page 1
A...
Similar Datasheet