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AFN2014

Alfa-MOS
Part Number AFN2014
Manufacturer Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Published Dec 6, 2018
Detailed Description Alfa-MOS Technology General Description AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Datasheet PDF File AFN2014 PDF File

AFN2014
AFN2014

Overview
Alfa-MOS Technology General Description AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L ) AFN2014 20V N-Channel Enhancement Mode MOSFET Features 20V/ 10A,RDS(ON)=14mΩ@VGS=4.
5V 20V/ 8A,RDS(ON)=17mΩ@VGS=2.
5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.
8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Sym...


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