AFP9560S

Alfa-MOS Technology General Description AFP9560S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9560S 40V P-Channel Enhancement Mode MOSFET Features -40V/ -14A,RDS(ON)= 13mΩ@VGS= -10V -40V/ -12A,RDS(ON)= 18mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch Load Switch in High Current Applications DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP9560ST252RG 9560S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP9560ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.C Jan. 2014 Unit Tape & Reel Quantity 250...