AFP9530S

Alfa-MOS Technology General Description AFP9530S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9530S 60V P-Channel Enhancement Mode MOSFET Features -60V/-25A,RDS(ON)= 26mΩ@VGS= -10V -60V/-15A,RDS(ON)= 36mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Load Switches Half-Bridge Motor Drives High Voltage Non-Synchronous Buck Converters Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP9530ST252RG 9530S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP9530ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A June 2015 Unit Tape & Reel ...