N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
AFN1990S
60V N-Channel Enhancement Mode MOSFET
General Description
AFN1990S, N-Channel enhancement...
Description
Alfa-MOS
Technology
AFN1990S
60V N-Channel Enhancement Mode MOSFET
General Description
AFN1990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low RDS
(ON)
TO-263-2L package design
Pin Description ( TO-263-2L )
Application
Synchronous Rectifier Power Supplies
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
1990S
AFN1990ST263RG
AAAAAA
TO-263-2L
BBBBBB
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN1990ST263RG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2014
Description Gate Source Drain
Unit Tape & Reel
Quantity 800 EA
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