..rSiliconix
~ incorporated
VDDV24
N-Channel Depletion-Mode MOSFET
DESIGNED FOR:
Switching Amplification
FEATURES
High Breakdown> 240 V LowrOS(on)<10n
TYPE Single
PACKAGE
DEVICE
TO-205AD ND2406B, ND2410B
TO-92 ND2406L, ND2410L
Chip
Available as above specifications
GEOMETRY DIAGRAM
Gate Pad
....... 1~
(0.127) -
0.007 (0.178)
..i...
