Si3433BDV

P-Channel 1.8-V (G-S) MOSFET Si3433BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.042 at VGS = - 4.5 V - 20 0.057 at VGS = - 2.5 V 0.080 at VGS = - 1.8 V ID (A) - 5.6 - 4.8 - 4.1 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs: 1.8 V Rated Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top V iew 16 25 34 (4) S (3) G 2.85 mm Ordering Information: Si3433BDV-T1-E3 (Lead (Pb)-free) Si3433BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: B3xxx (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID - 5.6 - 4.1 - 4.3 - 3.1 Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.0 1.0 1.1 0.6 ...