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LN2307

P-Channel Enhancement Mode Field Effect Transistor

Description

P-Channel Enhancement Mode Field Effect Transistor LN2307 ■ General Description VDSS -20V Product Summary ID -0.45A -0.35A RDS(ON)(mΩ)TYP 300 @ VGS=-4.5V 450 @ VGS=-2.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L/B package ■ Package  SOT-23-3L/B 3 D S ■ Ordering Information ...

natlinear

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