LN2301

P-Channel Enhancement Mode Field Effect Transistor LN2301 ■ General Description VDSS -20V Product Summary ID -3.6A RDS(ON)(mΩ)TYP 95 @ VGS=-4.5V 115@ VGS=-2.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L/B package ■ Package  SOT-23-3L/B ■ Ordering Information Part Number LN2301 Storage Temperature -55°C to +150°C ■ Pin Configuration Package SOT-23-3L/B Devices Per Reel 3000 S 3 D GS 12 SOT-23-3L/B (TOP VIEW) G D ■ Marking Rule . 0 . 1 . 6 . E .. SOT-23-3L (TOP VIEW) Notes: " "represents the batch number. " "says" 1 ", dot not said "0"; For example: dot on the top of the "6", and the top right of the "E", said "010010", used to track the product batch. R Rev.1.1 —Oct. 26. 2016 1 www.natlinear.com ■ Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Drain-source Diode forward current M...