LN2300

N-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS 20V Product Summary ID 3.6A RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.5V LN2300 ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L/B package ■ Package  SOT-23-3L/B 3 D D ■ Ordering Information GS 12 SOT-23-3L/B (Top View) G S Part Number LN2300 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000 ■ Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃-pulse db Drain-source Diode forward current Maximum power dissipation Operating junction Temperature range (TA=25℃ unless otherwise noted) symbol limit unit VDS 20 V VGS ±8 V ID 3.6 A IDM 12 A Is 1.25 A PD 1.25 W Tj -55—150 ℃ Rev.1.0 —July. 7, 2011 1 www.natlinear.com ■ Electrical Characteristics LN2300 (TA=25℃ unless otherwise noted) Parameter Dra...