P-Channel MOSFET
Alfa-MOS
Technology
General Description
AFP1913E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP1913E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-363 )
AFP1913E
20V P-Channel Enhancement Mode MOSFET
Features
z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z ESD Protection Diode design–in z SOT-363 package design
Application
z Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Load/Power Switching Smart Phones, Pagers z PA Switch z Level Switch
Pin Define
Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description So...
Similar Datasheet