AFN7002LDS

Alfa-MOS Technology AFN7002LDS 60V N-Channel Enhancement Mode MOSFET General Description AFN7002LDS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Features z 60V/0.5A , R DS(ON)=2.4Ω@VGS=10V z 60V/0.4A , R DS(ON)=3.0Ω@VGS=4.5V z 60V/0.3A , R DS(ON)=6.5Ω@VGS=2.5V z 60V/0.2A , R DS(ON)=9.0Ω@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD Protection Diode design–in z SOT-363 package design Pin Description ( SOT-363 ) Application z Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 ...