AFC6332ES

Alfa-MOS Technology AFC6332ES 20V N & P Pair Enhancement Mode MOSFET General Description AFC6332ES, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) Features N-Channel 20V/0.7A,RDS(ON)=320mΩ@VGS=4.5V 20V/0.6A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V Super high density cell design ESD Protection Diode design–in SOT-363 package design Application Load Switch for Portable Devices, Smart Phones, Pagers Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Ordering Information Part Ordering No. Part...