AFN3466

Alfa-MOS Technology General Description AFN3466, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN3466 30V N-Channel Enhancement Mode MOSFET Features 30V/3.6A,RDS(ON)=75mΩ@VGS=10V 30V/2.8A,RDS(ON)=105mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Ordering No. Part Marking Package AFN3466TS6RG 66YW TSOP-6 ϡʳ 66 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 2...