N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN3430W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN3430W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFN3430W
90V N-Channel Enhancement Mode MOSFET
Features
90V/4.0A,RDS(ON)=150mΩ@VGS=10V 90V/3.2A,RDS(ON)=155mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3 4 5 6
Symbol D D G S D D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3430WTS6RG
43YW
TSOP-6
ϡʳ 43 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN3430WTS6RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Apr. 2012
Description Drain Drain Gate Source Drai...
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