N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFN6800WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFN6800WS
30V N-Channel Enhancement Mode MOSFET
Features
30V/4.0A,RDS(ON)=34mΩ@VGS=10V 30V/3.2A,RDS(ON)=38mΩ@VGS=4.5V 30V/2.5A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3 4 5 6
Symbol G1 S2 G2 D2 S1 D1
Description Gate 1
Source 2 Gate 2 Drain 2
Source 1 Drain1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN6800WSTS6RG
80WYW
TSOP-6
ϡʳ 80W parts code
ϡʳ Y ϡʳ W
year code ( 0 ~ 9 ) week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN6800WSTS...
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