AFP3481S

Alfa-MOS Technology General Description AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOT-23-6L ) AFP3481S 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.4A,RDS(ON)=62mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23-6L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Ordering No. Part Marking Package AFP3481STS26RG 1SYW TSOT-23-6L ϡʳ 1S parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP3481STS26RG : 7” Tape & Reel ...