P-Channel MOSFET
Alfa-MOS
Technology
General Description
AFP3411, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Description
Alfa-MOS
Technology
General Description
AFP3411, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFP3411
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-6.0A,RDS(ON)=32mΩ@VGS=10V -30V/-4.5A,RDS(ON)=42mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3 4 5 6
Symbol D D G S D D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3411TS6RG
11YW
TSOP-6
ϡʳ 11 parts code
ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP3411TS6RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.B Mar. 2011
Descriptio...
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