AFN2324BA

Alfa-MOS Technology General Description AFN2324BA, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN2324BA 110V N-Channel Enhancement Mode MOSFET Features 105V/2.5A,RDS(ON)=280mΩ@VGS=10V 105V/1.5A,RDS(ON)=290mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application DC/DC Converters Load Switch LED Backlighting in LCD TVs Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN2324BAS23RG 4BYW SOT-23 ϡʳ 4B parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A...