P-Channel MOSFET
Alfa-MOS
Technology
General Description
AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFP2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFP2367AS
20V P-Channel Enhancement Mode MOSFET
Features
-20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-2.5A,RDS(ON)=98mΩ@VGS=-2.5V -20V/-2.2A,RDS(ON)=130mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
Application
Power Management in Note book Portable Equipment Battery Powered System Net Working System
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2367ASS23RG
67YW
S...
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