P-Channel MOSFET
Alfa-MOS
Technology
General Description
AFP2345A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP2345A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFP2345A
120V P-Channel Enhancement Mode MOSFET
Features
-120V/-1.0A,RDS(ON)=1.65Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.75Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
Application
Active Clamp Circuits in DC/DC Power Supplies
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2345AS23RG
45YW
SOT-23
ϡʳ 45 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP2345AS23RG : 7” Tape & Reel ; Pb- Free ; H...
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