P-Channel MOSFET
Alfa-MOS
Technology
General Description
AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP2325A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFP2325A
100V P-Channel Enhancement Mode MOSFET
Features
z -100V/-1.0A,RDS(ON)=600mΩ@VGS=-10V z -100V/-0.5A,RDS(ON)=650mΩ@VGS=-4.5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maximum DC
current capability z SOT-23 package design
Application
z Active Clamp Circuits in DC/DC Power Supplies
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2325AS23RG
25YW
SOT-23
※ 25 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
※ AFP2325AS23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free
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