AFP2319A

Alfa-MOS Technology General Description AFP2319A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2319A 40V P-Channel Enhancement Mode MOSFET Features -40V/-3.0A,RDS(ON)=100mΩ@VGS=-10V -40V/-2.4A,RDS(ON)=130mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Load Switch DC-DC System Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP2319AS23RG A9YW SOT-23 ϡʳ A9 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP2319AS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Apr. 20...