Document
Alfa-MOS
Technology
General Description
AFP2303A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFP2303A
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-4.0A,RDS(ON)=90mΩ@VGS=-10.0V -30V/-2.8A,RDS(ON)=125mΩ@VGS=-4.5V Super high density cell design for extremely
low RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-23 package design
Application
Battery Switch for Portable Devices Computers
- Bus Switch - Load Switch LED Display
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2303AS23RG
33YW
SOT-23
※ 33 parts code ※ Y year code ( 0 ~ 9 )
※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 2.